Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Single Crystalline Wurtzite GaAs Nanoneedles Epitaxially Grown on Highly Lattice-Mismatched Sapphire with Bright Luminescence

Heterogeneous integration of dissimilar single-crystalline materials, such as III-V compound on Si or sapphire, enables functionalities and performance that cannot be achieved with single material system. Yet, lattice mismatch makes growing high quality thin film on dissimilar substrates difficult. Recently high quality nanowires have been demonstrated on substrates with large lattice mismatche...

SELF - ASSEMBLY OF PHOSPHONATE MONOLAYERS ON GaAs

Substrate-free self-assembly approach toward large-area nanomembranes.

Free-standing two-dimensional nanostrucutures, such as graphene and semiconductor nanomembranes (NMs) featuring their integration with flexible polymer substrates, address applications in which electronic devices need to be stretchable or conformally positioned to nonplanar surfaces. We report a surfactant-directed surface assembly approach to producing large-area NMs at the water-air interface...

Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces.

Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, r...

Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.

We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor deposition with Au as catalyst. These nanowires with uniform diameters are self-aligned in <110> direction in the plane of (100). The dependence of planar nanowire morphology and growth rate as a function of growth temperature provides insights i...